p-channel enhancement mode mosfet semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing o rders. semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8447 issue 2 page 1 of 3 vp1008csm4 low on-resistance, r ds(on) moderate threshold, v gs(th) low input capacitance, c iss fast switching speed hermetic ceramic surface mount package ideally suited for power supply circuits, switching and driver (relay, solenoid, lamp etc.) applications screening options available absolute maximum ratings (t a = 25c unless otherwise stated) v ds drain ? source voltage 100v v gs gate ? source voltage 30v i d continuous drain current t a = 25c 300ma t a = 100c 195ma i dm pulsed drain current (1) 3a p d total power dissipation at t a = 25c 400mw derate above 25c 3.2mw/c t j operating temperature range -55 to +150c t stg storage temperature range -55 to +150c thermal properties symbols parameters min. typ. max. units r ja thermal resistance, junction to ambient 312.5 c/w notes notes notes notes (1) repetitive rating: pulse width limited by maximum j unction temperature
p-channel enhancement mode mosfet vp1008csm4 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8447 issue 2 page 2 of 3 electrical characteristics (t a = 25c unless otherwise stated) symbols parameters test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs = 0 i d = -10a -100 -110 v v gs(th) gate threshold voltage v ds = v gs i d = -1.0ma -2 -3.4 -4.5 v v gs = 20v v ds = 0v 100 i gss gate-source leakage current t j = 125c 500 na v ds = -100v v gs = 0 -10 i dss zero gate voltage drain current t j = 125c -500 a i d(on) (2) on-state drain current v ds = -15v v gs = -10v -1.1 -2 a v gs = -10v i d = -1.0a 2.5 5 r ds(on) (2) static drain-source on-state resistance t j = 125c 4.3 8 g fs (2) forward transconductance v ds = -10v i d = -0.5a 200 325 g os (2) common source output conductance v ds = -7.5v i d = -0.1a 0.45 m ? dynamic characteristics c iss input capacitance v gs = 0 75 150 c oss output capacitance v ds = -25v 40 60 c rss reverse transfer capacitance f = 1.0mhz 18 25 pf t d(on) 7 15 t r turn-on time 52 60 t d(off) 40 50 ns t f turn-off time v dd = -25v, r l = 47 , r g = 50 i d = -0.5a, v gen = -10v 56 65 notes notes notes notes (2) pulse width 300us, 2%
p-channel enhancement mode mosfet vp1008csm4 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8447 issue 2 page 3 of 3 mechanical data dimensions in mm (inches) lcc3 package ( mo - 041ba ) underside view pad 1 pad 1 pad 1 pad 1 ? ?? ? drain drain drain drain pad 3 pad 3 pad 3 pad 3 ? ?? ? source source source source pad 2 pad 2 pad 2 pad 2 ? ?? ? n/c n/cn/c n/c pad 4 pad 4 pad 4 pad 4 ? ?? ? gate gate gate gate 1 2 34 5.59 0.13 (0.22 0.005) 0.23 (0.009) rad. 1.02 0.20 (0.04 0.008) 2.03 0.20 (0.08 0.008) 1.40 0.15 (0.055 0.006) 0.25 0.03 (0.01 0.001) 0.23 (0.009) min. 1 . 27 0 . 05 ( 0 . 05 0 . 002 ) 3 . 81 0 . 13 ( 0 . 15 0 . 005 ) 0 . 64 0 . 08 ( 0 . 025 0 . 003 )
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